Semiconductor interconnect interface processing by pulse laser anneal
US6143650A · kind A · utility
22Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1999 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Jan 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming tantalum/copper barrier/seed layers in semiconductor channels or vias by using a pulsed laser annealing step. The pulsed laser can be controlled to heat the copper seed material for such short periods of time that the copper seed material does not agglomerate but the temperature is high enough to form an intermixed layer with the tantalum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.