Semiconductor metalization barrier
US6144099A · kind A · utility
279Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1999 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Mar 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor metalization barrier, and manufacturing method therefor, is provided which is a stack of a cobalt layer and cobalt tungsten layer deposited on a copper bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.