Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
US6146248A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1997 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | May 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.