Method for forming a contact plug over an underlying metal line using an etching stop layer
US6146987A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Aug 25, 1999 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Aug 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a contact plug that lands on a metal line of an interconnect structure formed on a semiconductor substrate. First, a first insulating layer is formed atop the substrate and between gaps in the interconnect structure. Next, an etching stop layer is formed on the first insulating layer. A second insulating layer is formed atop the etching stop layer. The second insulating layer is patterned and etched, stopping at the etching stop layer, to form a contact opening. The portion of the etching stop layer left exposed by the contact opening is removed. Finally, a barrier metal layer is formed along the walls of the contact opening and a conducting layer is deposited into the contact opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.