Method for forming low dielectric passivation of copper interconnects
US6147000A · kind A · utility
106Cited by
11References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1999 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Jan 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76858
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Cu interconnect member is passivated by diffusing Sn, Ta or Cr atoms into its upper surface to form an intermetallic layer. Embodiments include depositing Cu by electroplating or electroless plating to fill a damascene opening in a dielectric layer, CMP, depositing a sacrificial layer of Sn, Ta or Cr on the planarized surface, heating to diffuse Sn, Ta or Cr into the upper surface of the deposited Cu to form a passivating intermetallic alloy layer, and removing any remaining sacrificial layer by CMP or etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.