Copper sputtering target
US6149776A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3407
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides an apparatus and a method for physical vapor deposition of a metal onto a substrate comprising a physical vapor deposition chamber and a target disposed in an upper portion of the chamber. The target comprises a backing plate having a central portion and a flange portion attachable to the physical vapor deposition chamber, a sputterable portion extending from the central portion of the backing plate, and an annular ridge disposed on a surface of the flange portion. Preferably, the sputterable portion of the target includes a restriction side wall that restricts entry of plasma and back-scattered particles into the dark space gap between an upper shield and the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.