Plasma treatment of an interconnect surface during formation of an interlayer dielectric
US6150257A · kind A · utility
36Cited by
5References
46Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1998 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Aug 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76867
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to the formation of an ILD layer while preventing or reducing oxidation of the upper surface of a metallic interconnect. Avoidance of oxidation of the upper surface of a metallic interconnect is achieved according to the present invention by passivating the exposed upper surface of the metallic interconnect prior to formation of the ILD. In order to avoid the oxidation of an upper surface of an interconnect during the formation of an ILD layer, an in situ passivation of the upper surface of the interconnect is formed immediately prior to or simultaneously with the formation of the ILD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.