Apparatus and method for thermally processing substrates including a processor using multiple detection signals
US6151446A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1999 |
| Grant date | Nov 21, 2000 |
| Priority date | — |
| Expiry date | Jul 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods of thermally processing a substrate inside a processing chamber including a radiation source for heating the substrate are described. In one aspect, a detection system is configured to receive radiation from the substrate and to produce first and second detection system signals respectively representative of different first and second spectral portions of the received radiation. A processor is coupled to the detection system and configured to compute a measure of substrate temperature based upon the second detection system signal and to compute an indication of the relative accuracy of the computed measure of substrate temperature based upon the first detection system signal. In another aspect, the substrate is radiatively heated; radiation is received from the substrate and an intensity signal representative of the intensity of the received radiation is produced; an indication of the rate at which the substrate is being heated is computed based upon the intensity signal; and when the substrate is placed onto a substrate support inside the processing chamber is controlled based upon the computed heating rate indication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.