Abhilash J. Mayur
81Patents
17h-index
91Co-inventors
87Inventor score
Filing activity: Apr 1, 1998 → Nov 17, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7323401B2 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask | Emerging Cross-Sectional Technologies | 541 | Expired |
| US7312162B2 | Low temperature plasma deposition process for carbon layer deposition | Electricity | 523 | Expired |
| US7109098B1 | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing | Electricity | 521 | Expired |
| US7429532B2 | Semiconductor substrate process using an optically writable carbon-containing mask | Electricity | 517 | Active |
| US7422775B2 | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing | Electricity | 514 | Expired |
| US7312148B2 | Copper barrier reflow process employing high speed optical annealing | Electricity | 513 | Active |
| US7335611B2 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer | Performing Operations; Transporting | 512 | Active |
| US6151446A | Apparatus and method for thermally processing substrates including a processor using multiple detection signals | Electricity | 390 | Expired |
| US6987240B2 | Thermal flux processing by scanning | Performing Operations; Transporting | 132 | Expired |
| US6280183A | Substrate support for a thermal processing chamber | Chemistry; Metallurgy | 62 | Expired |
| US7279721B2 | Dual wavelength thermal flux laser anneal | Electricity | 32 | Expired |
| US8288683B2 | Fast axis beam profile shaping for high power laser diode based annealing system | Emerging Cross-Sectional Technologies | 30 | Active |
| US7135392B1 | Thermal flux laser annealing for ion implantation of semiconductor P-N junctions | Electricity | 26 | Expired |
| US6164816A | Tuning a substrate temperature measurement system | Physics | 24 | Expired |
| USD959490S1 | Display screen or portion thereof with graphical user interface | General | 23 | Active |
| US7595208B2 | Method of laser annealing using two wavelengths of radiation | Electricity | 19 | Active |
| US7494272B2 | Dynamic surface annealing using addressable laser array with pyrometry feedback | Electricity | 17 | Active |
| US7078302B2 | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal | Electricity | 17 | Expired |
| US7754518B2 | Millisecond annealing (DSA) edge protection | Electricity | 15 | Active |
| US7129440B2 | Single axis light pipe for homogenizing slow axis of illumination systems based on laser diodes | Physics | 13 | Expired |
| US7109087B2 | Absorber layer for DSA processing | Electricity | 12 | Expired |
| US6803546B1 | Thermally processing a substrate | Electricity | 12 | Expired |
| US6260894A | Assembly for wafer handling system | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7674999B2 | Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system | Emerging Cross-Sectional Technologies | 8 | Active |
| US8829393B2 | Scanned laser light source | Performing Operations; Transporting | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.