Metallized interconnection structure and method of making the same
US6153521A · kind A · utility
44Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Jun 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dual damascene method of fabricating an interconnection level of conductive lines and connecting vias etches a via opening in a first insulating layer. A photoresist layer that the defines the conductive wiring is deposited and patterned on the first insulating layer after the via opening has been created. The via opening and the conductive wire opening in the resist layer are then filled with the conductive material, such as copper. The resist layer may then be removed and a second insulating layer provided over the first insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.