Apparatus for constructing an oxidized film on a semiconductor wafer
US6155198A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1996 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Jul 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/336
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.