Plasma processing apparatus
US6156151A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1997 |
| Grant date | Dec 5, 2000 |
| Priority date | — |
| Expiry date | Jul 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32834
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching apparatus has a central processing chamber, an upper exhaust chamber thereabove, and a lower exhaust chamber therebelow. The processing chamber, the upper exhaust chamber, and the lower exhaust chamber are airtightly formed by a central casing part, an upper casing part, and a lower casing part which are separably combined. The upper and lower exhaust chambers are respectively connected to upper and lower exhaust pumps. A susceptor having a support surface for supporting a target object, and an upper electrode or shower head opposing it are arranged in the processing chamber. A processing gas spouted through the shower head flows upward and downward toward the upper and lower exhaust chambers via the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.