Cleaning compositions for high dielectric structures and methods of using same
US6162738A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1998 |
| Grant date | Dec 19, 2000 |
| Priority date | — |
| Expiry date | Sep 1, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cleaning method includes providing a stack including at least a layer of Ta.sub.2 O.sub.5 and a layer of conductive material. The stack includes a conductive etch residue on at least portions thereof. A dilute aqueous composition is provided including hydrochloric acid (HCl), hydrogen peroxide (H.sub.2 O.sub.2), and deionized water (H.sub.2 O). The stack is exposed to the dilute aqueous composition to remove the conductive etch residue. The dilute aqueous composition may include a ratio of H.sub.2 O:H.sub.2 O.sub.2 :HCl in a range of about 100:1:0.5 to about 100:10:5. A cleaning composition for use in the method includes a dilute aqueous composition including hydrochloric acid (HCl), hydrogen peroxide (H.sub.2 O.sub.2), and deionized water (H.sub.2 O).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.