Plasma etching method
US6165375A · kind A · utility
9Cited by
31References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1997 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Sep 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of plasma etching and a method of operating a plasma etching apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.