Method of reliably capping copper interconnects
US6165894A · kind A · utility
31Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1998 |
| Grant date | Dec 26, 2000 |
| Priority date | — |
| Expiry date | Aug 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The adhesion of a diffusion barrier or capping layer to a Cu or Cu alloy interconnect member is significantly enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member with an ammonia plasma followed by depositing the diffusion barrier layer on the treated surface. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric interlayer, chemical mechanical polishing, treating the exposed surface of the Cu/Cu alloy interconnect with an ammonia plasma, and depositing a silicon nitride diffusion barrier layer directly on the plasma treated surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.