Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
US6172365A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1999 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Nov 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam inspection method including the steps of irradiating an electron beam to an object to be inspected, detecting at least one of a secondary electron and a reflected electron emanated from the object by the irradiation of the electron beam, and obtaining an image of the object from the detected electron. The method further includes the steps of controlling an electric field in a neighborhood of the object for filtering the at least one of the secondary and reflected electron emanated from the object so as to control the contrast of the image, detecting at least one of the secondary and reflected electron emanated from the object which passes through the electric field in the neighborhood of the object by the irradiation of the electron beam, and conducting inspection or measurement of the object on the basis of a detected signal of the detection in the controlled electric field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.