Magnetic random access memory and fabricating method thereof

US6174737A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Mark Durlam · Chandler, US
• Gloria Kerszykowski · Fountain Hills, US
• Jon Slaughter · Tempe, US
• Theodore Zhu · Maple Grove, US
• Eugene Chen · Gilbert, US
• Saied N. Tehrani · Tempe, US
• Kelly Kyler · Mesa, US

Key dates

• Filing date: Jun 24, 1999
• Grant date: Jan 16, 2001
• Expiry date: Jun 24, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/10
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An improved and novel MRAM device with magnetic memory elements and circuitry for controlling magnetic memory elements is provided. The circuitry, for example, transistor (12a) having a gate (17a), a drain (18) and a source (16a) is integrated on a substrate (11) and coupled to a magnetic memory element (43) on the circuitry through a plug conductor (19a) and a conductor line (45). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44). Digit line (29) and bit line (48) are placed under and on top of magnetic memory element (43), respectively, and enabled to access magnetic memory element (43). These lines are enclosed by a high permeability layer (31, 56, 58) excluding a surface facing magnetic memory element (43), which shields and focuses a magnetic field toward magnetic memory element (43).