Low temperature photoresist removal for rework during metal mask formation
US6174819A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1998 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Jul 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A defective photoresist mask is removed from a metal layer prior to etching by low-temperature processing to minimize or substantially eliminate any resulting residue on the metal layer, thereby enabling the formation of an interconnection pattern with minimal defects. Embodiments include removing the defective mask by applying a solvent at a temperature of about 80.degree. C. or less, forming a new photoresist mask, and etching the underlying metal layer. The substantial elimination of residue on the metal layer prior to etching avoids bridging between resulting interconnection lines and, hence, short circuiting and device failure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.