Methods of forming a semiconductor device
US6176983A · kind A · utility
19Cited by
10References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1997 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Sep 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides methods of forming a semiconductor workpiece. One method of forming a semiconductor device in accordance with the present invention includes: providing a semiconductor workpiece; forming a via within the semiconductor workpiece, the via including plural sidewalls joining a bottom surface at respective plural corners; first sputtering a process layer upon at least a portion of the bottom surface using ionized metal plasma physical vapor deposition; and following the sputtering of the process layer, second sputtering at least some of the process layer towards the corners within the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.