Patent · US Expired

Removal of reticle effect on critical dimension by reticle rotation

US6178256A · kind A · utility

3Cited by

1References

10Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Khanh B. Nguyen · San Mateo, US
Paul Ackmann · Gansevoort, US
Stuart E. Brown · Austin, US

Key dates

Filing date	Dec 1, 1998
Grant date	Jan 23, 2001
Priority date	—
Expiry date	Dec 1, 2018

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70625
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method (200) of characterizing a lithographic printer includes the steps of printing a first and second pattern (202, 228) on substrates (214) using a reticle (220) having a first and second orientation. The method (200) further includes measuring a critical dimension of the first and second pattens at two points (230, 234) and determining an imaging system component of the critical dimension of the patterns at the two points (236). The method (200) may be further expanded to encompass substantially all the points within the image field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.