Process for low k organic dielectric film etch
US6184142A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1999 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Apr 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A simplified method is disclosed for etching low k organic dielectric film. A substrate is provided with a hardmask layer and low k organic dielectric layer formed thereon in which hardmask layer is on the dielectric layer. A layer of photoresist is formed on the hardmask layer and imaged with a pattern by exposure through a dark field mask. As a key step, the pattern is transferred into the hardmask layer by dry etching and then the photoresist is stripped in-situ. Then, the interconnect is formed by using dry etching the low k organic dielectric layer using the hardmask layer as a mask, and readying it for the next semiconductor process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.