Semiconductor process chamber having improved gas distributor
US6185839A · kind A · utility
39Cited by
6References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 1998 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | May 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50. A gas distributor 90 provided for introducing process gas into the chamber 25, comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50, into the chamber 25. Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140. An exhaust is used to exhaust the process gas from the chamber 25.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.