Multi state sensing of NAND memory cells by varying source bias
US6188606A · kind A · utility
3Cited by
7References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 6, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Aug 6, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and circuit for sensing multi states of a NAND memory cell by varying source bias, at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the source bias, and sensing the memory cell state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.