Michael Han
6Patents
4h-index
8Co-inventors
46Inventor score
Filing activity: Aug 6, 1999 → Feb 26, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6567303B1 | Charge injection | Physics | 76 | Expired |
| US6529410B1 | NAND array structure and method with buried layer | Electricity | 49 | Expired |
| US6344994B1 | Data retention characteristics as a result of high temperature bake | Physics | 34 | Expired |
| US6166951A | Multi state sensing of NAND memory cells by applying reverse-bias voltage | Physics | 8 | Expired |
| US8847391B2 | Non-circular under bump metallization (UBM) structure, orientation of non-circular UBM structure and trace orientation to inhibit peeling and/or cracking | Electricity | 4 | Active |
| US6188606A | Multi state sensing of NAND memory cells by varying source bias | Physics | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.