H2 diffusion barrier formation by nitrogen incorporation in oxide layer
US6194328A · kind A · utility
10Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Dec 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric interlayer is formed over a semiconductor substrate comprising at least one active region. The exposed upper surface of the dielectric interlayer is treated with nitrogen to form a nitrided barrier layer thereon. At least one hydrogen-containing dielectric layer is formed over the dielectric interlayer having the nitrided barrier layer thereon. The nitrided barrier layer serves as a barrier to diffusion of hydrogen from the at least one hydrogen-containing dielectric layer into the dielectric interlayer, thereby preventing a decrease in hot carrier injection reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.