Method for manufacturing even dielectric layer
US6200897A · kind A · utility
328Cited by
4References
11Claims
0Family size
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Key dates
| Filing date | Jun 6, 1999 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Jun 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an even dielectric layer. A substrate having a patterned conductive layer formed thereon is provided. A first dielectric layer with a relatively high dopant dosage is formed on the substrate and the patterned conductive layer. A second dielectric layer with a relatively low dopant dosage is formed on the first dielectric layer. A chemical-mechanical polishing process is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.