Method of forming titanium silicide
US6207562A · kind A · utility
6Cited by
9References
16Claims
0Family size
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Key dates
| Filing date | Nov 24, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Nov 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a titanium silicide on a silicon wafer. The method includes the steps of removing native oxide film formed on the silicon wafer; depositing a titanium thin film on the silicon wafer using standard type (low power) sputtering method; quickly heat-treating the silicon wafer on which the titanium thin film is deposited so that diffusion occurs between the titanium thin film and the silicon wafer, thereby forming the titanium silicide, and removing the titanium thin film. A degas process before the titanium deposition is proposed also to remove impurities on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.