Chemical vapor deposition vaporizer
US6210485A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1999 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Jul 13, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for deposition on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. The vaporizer comprises thermally controlled components which are adapted for easy assembly and disassembly. A main vaporizing section provides a large heated surface for flash vaporization. A high conductance blocker is disposed at a lower end of the vaporizer to provide an extended vaporization surface. Optionally, a filter may be employed to capture unvaporized precursor droplets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.