Patent · US Expired

Resist composition and process of forming a patterned resist layer on a substrate

US6210856A · kind A · utility

59Cited by
15References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 27, 1999
Grant dateApr 3, 2001
Priority date
Expiry dateJan 27, 2019

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/0045
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A radiation sensitive resist composition exhibiting high resolution and enhanced etch resistance comprising a silicon containing polymeric additive, a non-silicon containing base polymer, a photoacid generator and a base is provided. A method of forming a patterned resist film is also provided. A resist film having an upper surface region enriched with silicon is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.