Resist composition and process of forming a patterned resist layer on a substrate
US6210856A · kind A · utility
59Cited by
15References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1999 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Jan 27, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A radiation sensitive resist composition exhibiting high resolution and enhanced etch resistance comprising a silicon containing polymeric additive, a non-silicon containing base polymer, a photoacid generator and a base is provided. A method of forming a patterned resist film is also provided. A resist film having an upper surface region enriched with silicon is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.