Method for manufacturing fusible links in a semiconductor device
US6210995A · kind A · utility
3Cited by
10References
6Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 9, 1999 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Sep 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to form a cavity for a fusible link in a semiconductor device, an etchable material is applied over and around a portion of the fusible link and the etchable material is coated with a protection layer. The access abutting the etchable material is formed through the protection layer. After the removal of the etchable material, the access is partially filled with a refilling material to thereby form the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.