Method of forming reliable copper interconnects
US6211084A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1998 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Jul 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The adhesion of a diffusion barrier or capping layer to Cu and/or Cu alloy interconnect members is significantly enhanced by treating the exposed surface of the Cu and/or Cu alloy interconnect members with a silane or dichlorosilane plasma to form a layer of copper silicide thereon prior to depositing the capping layer. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric interlayer, chemical mechanical polishing, treating the exposed surface of the Cu or Cu alloy interconnect member in a silane or dichlorosilane plasma to form the copper silicide layer and depositing a capping layer of silicon nitride thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.