MOSFET-type device with higher driver current and lower steady state power dissipation
US6213869A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 1999 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | May 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A coupling capacitor is coupled between the gate and the body region of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The body region of the MOSFET is electrically isolated to form a floating body region. The capacitance of the coupling capacitor is designed such that a BJT (Bipolar Junction Transistor) connected in parallel with the MOSFET turns on when the MOSFET turns on. In addition such a design of the coupling capacitor lowers the magnitude of the threshold voltage of the MOSFET when the MOSFET is turned on. Furthermore, the capacitance of the coupling capacitor is designed such that the magnitude of the threshold voltage of the MOSFET is raised when the MOSFET is turned off. Thus, the MOSFET type device of the present invention has both higher drive current when the MOSFET is turned on and lower steady state power dissipation when the MOSFET is turned off with a variable threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.