Chemical vapor deposition systems and methods for depositing films on semiconductor wafers
US6214123A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1998 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Aug 20, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure relates to a chemical vapor deposition system including a chemical vapor deposition chamber, and a circlet wafer positioned within the chemical vapor deposition chamber. The circlet wafer is mounted on a rotatable member that at least partially extends through an opening of the wafer. A drive mechanism is used to rotate the rotatable member and the circlet wafer. The system also includes a gas injector for injecting reactive gases toward the circlet wafer. The present disclosure also relates to a chemical vapor deposition system including a chemical vapor deposition chamber, a wafer positioned within the chemical vapor deposition chamber, and a gas injector for injecting first and second reactive gases toward the wafer. The gas injector includes a mixing region for mixing the first and second reactive gases before the first and second reactive gases are discharged from the gas injector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.