Semiconductor processing using antireflective layer having high wet etch rate
US6214526A · kind A · utility
7Cited by
7References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 17, 1998 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Feb 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antireflective layer for use in semiconductor photolithography is fabricated of silicon nitride (Si.sub.1-x-y N.sub.x H.sub.y) in a plasma-enhanced chemical vapor deposition process using a gaseous mixture of ammonia, silane and nitrogen. By varying the process temperature and the ratio of ammonia to silane, acceptable values of the refractive index n and extinction coefficient k can be obtained. The silicon nitride layer produced by this technique etches rapidly and therefore allows the antireflective layer to be removed quickly, thereby minimizing the damage to the underlying structures in a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.