Kenneth P. MacWilliams
10Patents
6h-index
26Co-inventors
62Inventor score
Filing activity: Sep 22, 1994 → Dec 19, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5580802A | Silicon-on-insulator gate-all-around mosfet fabrication methods | Emerging Cross-Sectional Technologies | 83 | Expired |
| US6417092B1 | Low dielectric constant etch stop films | Electricity | 58 | Expired |
| US6251770A | Dual-damascene dielectric structures and methods for making the same | Electricity | 56 | Expired |
| US5497019A | Silicon-on-insulator gate-all-around MOSFET devices and fabrication methods | Emerging Cross-Sectional Technologies | 44 | Expired |
| US7811924B2 | Air gap formation and integration using a patterning cap | Electricity | 25 | Active |
| US6214526A | Semiconductor processing using antireflective layer having high wet etch rate | Electricity | 7 | Expired |
| US6909190B2 | Dual-damascene dielectric structures | Electricity | 3 | Expired |
| US7060605B2 | Methods for making dual-damascene dielectric structures | Electricity | 3 | Expired |
| US8293460B2 | Double exposure patterning with carbonaceous hardmask | Physics | 1 | Active |
| US7501339B2 | Methods for making dual-damascene dielectric structures | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.