Method of titanium/titanium nitride integration
US6214714A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1999 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Jun 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of film processing comprises forming an integrated titanium/titanium nitride (Ti/TiN) film structure having an intermediate layer. The intermediate layer comprises species containing Si, and preferably containing Si and Ti, such as titanium silicide (TiSi.sub.x), or TiSi.sub.x O.sub.y, among others. The intermediate layer protects the underlying Ti film against chemical attack during subsequent TiN deposition using a titanium tetrachloride (TiCl.sub.4)-based chemistry. The method allows reliable Ti/TiN film integration to be achieved with excellent TiN step coverage. For example, the film structure can be used as an effective barrier layer in integrated circuit fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.