Method for removing photoresist layer
US6218084A · kind A · utility
6Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Dec 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method described for removing a photoresist/polymers layer on a substrate. The method comprises the steps of providing a wafer having an oxide layer, a photoresist/polymers layer, an opening penetrating through the photoresist/polymers layer and the oxide layer, and the sidewall polymer on the surface of photoresist layer and the oxide layer. An in-situ plasma-etching step using an additional gas mixed with oxygen as source is performed to remove the photoresist/polymers layer without residues, no damages to substrate and oxide and no changes on the critical dimension of the opening during etching step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.