Method of cleaning the polymer from within holes on a semiconductor wafer
US6221772A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1999 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Jul 14, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of in-situ cleaning polymers from holes on a semiconductor wafer and in-situ removing the silicon nitride layer. The semiconductor wafer comprising a substrate, a silicon nitride (Si.sub.3 N.sub.4) layer on the substrate, a silicon oxide (SiO.sub.2) layer on the silicon nitride layer, and a photo-resist layer on the silicon oxide layer. The silicon oxide layer and the photo-resist layer have a hole extending down to the silicon nitride layer. The hole contains polymer left after etching of the silicon oxide layer. The method comprises performing a in-situ plasma ashing process by injecting oxygen (O.sub.2) and argon (Ar) to completely remove the photo-resist layer and the polymer remaining within the hole. Subsequently, the silicon nitride layer was removed in the same chamber. The flow rate of O.sub.2 is maintained between 50.about.2000 sccm (standard cubic centimeter per minute) and the flow rate of Ar is maintained between 50.about.500 sccm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.