Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
US6222229A · kind A · utility
102Cited by
10References
11Claims
0Family size
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Key dates
| Filing date | Jun 14, 1999 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Jun 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A high frequency power field effect transistor has a self-aligned gate-drain shield adjacent to the gate and overlying the drain. Fabrication of the structure does not require complex or costly processing and the resulting self-aligned shield structure minimizes increase to input and output capacitances. Hot carrier injection and related shifts are reduced thereby improving reliability of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.