Patent · US Expired

Apparatus and method for reducing defects in a semiconductor lithographic process

US6222936A · kind A · utility

63Cited by
11References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 13, 1999
Grant dateApr 24, 2001
Priority date
Expiry dateSep 13, 2019

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/7065
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An arrangement for optimizing a lithographic process forms a pattern on a silicon wafer using a photocluster cell system to simulate an actual processing condition for a semiconductor product. The resist pattern is then inspected using a wafer inspection system. An in-line low voltage scanning electron microscope (SEM) system reviews and classifies defect types, enabling generation of an alternative processing specification. The alternative processing specification can then be tested by forming patterns on different wafers, and then performing split-series testing to analyze the patterns on the different wafers for comparison with the existing lithographic process and qualification for production.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.