Plasma density and etch rate enhancing semiconductor processing chamber
US6228208A · kind A · utility
18Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1998 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Aug 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A lid assembly for a narrow-gap magnetically enhanced reactive ion etch (MERIE) chamber. The lid assembly has a lid and a liner. Both pieces are substantially U-shaped and interfit such that the interface between them extends outside the chamber. A blocker plate is situated in a recess between a lower surface of the lid and an upper surface of the liner. The blocker plate is concave in shape so that a downward bow of the lid does not exert a stress on the blocker plate. The novel lid assembly is more leak resistant, requires less cleaning time and is cheaper than a design that utilizes a moving pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.