High-density plasma, organic anti-reflective coating etch system compatible with sensitive photoresist materials

US6228279A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Michael D. Armacost · Winooski, US
• Peter D. Hoh · Hopewell Junction, US
• Richard S. Wise · Beacon, US
• Wendy Yan · Somers, US

Key dates

• Filing date: Sep 17, 1998
• Grant date: May 8, 2001
• Expiry date: Sep 17, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31138
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By providing a photoresist material with a protective polymer layer during the etching of an organic anti-reflective coating, undue damage to the photoresist material can be avoided during opening of the anti-reflective coating without the need for an oxidant. The preferred polymer chemistry system for producing such a result includes a fluorohydrocarbon-containing polymer mixture with a strong source of CF.sub.3, preferably C.sub.2 F.sub.6. The etchant also includes a source of hydrogen selected from CH.sub.3 F, C.sub.2 HF.sub.5, or CH.sub.2 F.sub.2, and a diluent selected from Ar, He or N.sub.2.