Field emission displays with reduced light leakage
US6228667A · kind A · utility
3Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2000 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/463
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.