Method for forming semiconductor seed layers by inert gas sputter etching
US6228754A · kind A · utility
51Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jan 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76865
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming seed layers in semiconductor device channels or vias by using an inert gas sputter etching technique. The technique etches back the seed layers which results in a reduction of seed layer overhang at the top of the channels or vias, thereby enhancing the subsequent filling of the channel or vias by conductive materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.