Sequential in-situ heating and deposition of halogen-doped silicon oxide
US6228781A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1997 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Apr 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500.degree. C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gap-fill and stability due to the lack of free fluorine in the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.