Apparatus and methods for upgraded substrate processing system with microwave plasma source
US6230652A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2000 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Jan 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32357
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.