Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance
US6235163A · kind A · utility
43Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Jul 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved system for performing plasma enhanced PVD of copper, aluminum, tungsten or other metallic material is disclosed. The system has markedly improved performance in the critical area of unwanted in-film particle deposits. The improved performance is provided by lowering the operating temperature of the RF coil used in the plasma enhanced PVD system and by carefully smoothing the outer surface of the RF coil. High conductivity material in the coil supports, increased contact area between the coil supports and the RF coil, and the use of active cooling of the coil further enhance the performance of the system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.