High rate silicon dioxide deposition at low pressures
US6235652A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Sep 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
High rate silicon dioxide deposition at low pressures, including a method of depositing silicon dioxide providing a high rate of deposition at a low process chamber pressure, yielding a film with excellent uniformity and with an absence of moisture inclusion and gas phase nucleation. According to the method, a wafer is placed in a reaction chamber wherein a reactant gas flow of silane and oxygen is directed in parallel with the wafer via a plurality of temperature-controlled gas injectors, and confined to a narrow region above the wafer. The gas is injected at a high velocity resulting in the deposition rate being limited only by the rate of delivery of unreacted gas to the wafer surface and the rate of removal of by-products. The high velocity gas stream passing across the wafer has the effect of thinning the layer adjacent the wafer surface containing reaction by-products, known as the "boundary layer," which results in faster delivery of the desired reactant gas to the wafer surface. The high velocity gas flow causes a very low gas residence time in the area of interest (i.e. above the substrate surface). The gas flow sweeps out unwanted reaction by-products resulting in a furth…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.