Method of forming tungsten silicide film
US6245673A · kind A · utility
4Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1999 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | Aug 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume "in terms of a phosphine gas".
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.