Precision wide band gap semiconductor etching
US6245687A · kind A · utility
5Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2000 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | Jan 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching GaN material comprising configuring the GaN material as an anode in an electrochemical cell where the electrochemical cell is comprised of an anode, a cathode and an electrolyte, and applying a bias across the anode and the cathode to a level which is sufficient to induce etching of the material. The etch rate of the material is controllable by varying the bias level. The cell is additionally illuminated with a preselected level of UV light which provides for uniformity of the etching process. The present method is particularly useful for etching a GaN HBT from n-p-n GaN material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.